1/7 mds35/50/80series diode / scr module main features: description packaged in isotop modules, the mds series is based on the half-bridge scr-diode configuration. they are suitable for high power applications, using phase controlled bridges, such as soft-start circuits, welding equipment, motor speed controller. the compactness of the isotop package allows high power density and optimized power bus connections. thanks to their internal ceramic pad, they provide high voltage insulation (2500v rms), complying with ul standards (file ref: e81734). symbol value unit i t(rms) 50-70-85 a v drm /v rrm 800 and 1200 v i gt 50 and 100 ma absolute ratings (limiting values) symbol parameter value unit 35 50 80 i t(rms) rms on-state current 50 70 85 a i t(av) average on-state current (single phase-circuit, 180 conduction angle per device) tc=85c253555 a i tsm i fsm non repetitive surge peak on-state current (tj initial = 25c) tp = 8.3 ms tj = 25c 420 630 730 a tp = 10 ms 400 600 700 i 2 ti 2 t value for fusing tp = 10 ms tj = 25c 800 1800 2450 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100 ns f = 60 hz tj = 125c 50 a/s i gm peak gate current tp = 20 s tj = 125c 4 a p g(av) average gate power dissipation tj = 125c 1 w t stg t j storage junction temperature range operating junction temperature range -40to+150 -40to+125 c v rgm maximum peak reverse scr gate voltage 5 v isotop? pin connections www.kersemi.com
mds35 / 50 / 80 series 2/7 electrical characteristics (tj = 25c, unless otherwise specified) scr diode symbol test conditions mds unit 35 50 80 i gt v d =12v r l =30 w min. 5 10 ma max. 50 100 v gt max. 1.3 v v gd v d =v drm r l =3.3k w tj = 125c min. 0.2 v i h i t = 500 ma gate open max. 80 ma i l i g =1.2i gt max. 120 ma dv/dt v d =67%v drm gate open tj = 125c min. 1000 v/s v tm i tm = 80 a tp = 380 s tj = 25c max. 1.7 - - v i tm =110a tp=380s -1.75- i tm =170a tp=380s --1.75 v t0 threshold voltage tj = 125c max. 0.85 v r d dynamic resistance tj = 125c max. 11 7.0 5.5 m w i drm i rrm v drm /v rrm rated tj = 25c max. 20 a tj = 125c 10 ma symbol test conditions mds unit 35 50 80 v f i f =80a tj = 25c max. 1.7 - - v i f = 110 a -1.7- i f = 170 a --1.7 v t0 threshold voltage tj = 125c max. 0.85 v r d dynamic resistance tj = 125c max. 11 7.0 5.5 m w i r v r =v rrm tj = 25c max. 20 a tj = 125c 10 ma www.kersemi.com
mds35 / 50 / 80 series 3/7 thermal resistances product selector ordering information other information note :xxx=voltage symbol parameter value unit r th(j-c) junction to case (dc) mds35 1.00 c/w mds50 0.75 mds80 0.45 part number voltage (xxx) sensitivity package 800 v 1200 v mds35-xxx x x 50 ma isotop tm mds50-xxx x x 50 ma mds80-xxx x x 150 ma part number marking weight base quantity packing mode mds35-xxx mds35-xxx 27.0 g 10 tube msds50-xxx mds50-xxx 27.0 g 10 tube mds80-xxx mds80-xxx 27.0 g 10 tube scr module series current: 35: 50a 50: 70a 80: 85a voltage: 800: 800v 1200: 1200v www.kersemi.com
mds35 / 50 / 80 series 4/7 fig. 1-1: maximum average power dissipation versus average on-state current (thyristor or diode, sinuso?dal waveform). fig. 1-2: maximum average power dissipation versus average on-state current (thyristor or diode, rectangular waveform). fig. 1-3: maximum total power dissipation versus output current on resistive or inductive load (single phase bridge rectifier, two packages). fig. 1-4: maximum total power dissipation versus output current (three phase bridge rectifier, three packages). fig. 2-1: average on-state current versus case temperature (thyristor or diode, sinuso?dal waveform). fig. 2-2: average on-state current versus case temperature (thyristor or diode, rectangular waveform). www.kersemi.com
mds35 / 50 / 80 series 5/7 fig. 3: relative variation of thermal impedance junction to case versus pulse duration. fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 5-1: surge peak on-state current versus number of cycles (mds35 and mds50). fig. 5-2: surge peak on-state current versus number of cycles (mds80). fig. 6-1: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i2t (mds35 and mds50). fig. 6-2: non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i2t (mds80). www.kersemi.com
mds35 / 50 / 80 series 6/7 fig. 7-1: on-state characteristics (thyristor or diode, maximum values) (mds35). fig. 7-2: on-state characteristics (thyristor or diode, maximum values) (mds50). fig. 7-3: on-state characteristics (thyristor or diode, maximum values) (mds80). www.kersemi.com
mds35 / 50 / 80 series 7/7 package mechanical data isotop? n recommended torque value: 1.3 nm (max. 1.5 nm) for the 6 x m4 screws (2 x m4 screws recom- mended for mounting the package on the heatsink and the 4 provided screws. n the screws supplied with the package are adapted for mounting on a board (or other types of termi- nals) with a thickness of 0.6 mm min. and 2.2 mm max. ref. dimensions millimeters inches min. max. min. max. a 11.80 12.20 0.465 0.480 a1 8.90 9.10 0.350 0.358 b 7.8 8.20 0.307 0.323 c 0.75 0.85 0.030 0.033 c2 1.95 2.05 0.077 0.081 d 37.80 38.20 1.488 1.504 d1 31.50 31.70 1.240 1.248 e 25.15 25.50 0.990 1.004 e1 23.85 24.15 0.939 0.951 e2 24.80 typ. 0.976 typ. g 14.90 15.10 0.587 0.594 g1 12.60 12.80 0.496 0.504 g2 3.50 4.30 0.138 0.169 f 4.10 4.30 0.161 0.169 f1 4.60 5.00 0.181 0.197 p 4.00 4.30 0.157 0.69 p1 4.00 4.40 0.157 0.173 s 30.10 30.30 1.185 1.193 www.kersemi.com
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